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Samsung begins mass production of 20-nano 8-gigabit mobile DRAM

All News 10:13 December 23, 2014

SEOUL, Dec. 23 (Yonhap) -- Samsung Electronics Co. said Tuesday it has started mass production of 8-gigabit mobile memory chips based on its 20-nanometer technology that it said are faster at data handling and better in saving power.

The 8-gigabit, low power double data rate 4 (LPDDR4) mobile dynamic random access memory (DRAM) is capable of data processing twice as fast as the predecessor, the LPDDR3, and is 40 percent more energy-efficient, the company said.

The LPDDR is the most common type of memory chip used in hand-held devices like smartphones and digital cameras.

The new mobile memory chip can support ultra high-definition video recording and continuous shooting of high-resolution images on an input/output data rate of up to 3,200 megabits per second, two times faster than PC DRAMs.

Its operating voltage has been reduced to 1.1 volts, making it the least power-consuming chip available for larger-screen smartphones.

With four of the new LPDDR4, the company can create 4 gigabyte (GB) memory chips, which will come with the highest density as mobile DRAM, the company added.

Samsung Electronics will be given an Innovation Award for its 4GB LPDDR package from the Consumer Electronics Show (CES), slated to open in January.

Samsung begins mass production of 20-nano 8-gigabit mobile DRAM - 2

elly@yna.co.kr
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